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半導(dǎo)體行業(yè)觀察第一站
型號(hào) |
供應(yīng)商
|
品牌 | 批號(hào) | 數(shù)量 | 封裝 | 交易說(shuō)明 | 詢價(jià) |
---|---|---|---|---|---|---|---|
SI5515CDC-T1-GE3
|
VISHAY/威世
|
480000
|
|
||||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
23+ |
360000
|
SOP-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
23+ |
360000
|
SOP-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
2025+ |
360000
|
SOP-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
23+ |
330000
|
1206-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
23 |
96530
|
1206-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
24+ |
89722
|
ChipFET1206-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
21+ |
88888
|
SOP-8 |
|
||
SI5515CDC-T1-GE3
|
NK/南科功率
|
2025+ |
88877
|
1206-8 |
中低壓場(chǎng)效應(yīng)管
|
|
|
SI5515CDC-T1-GE3
|
VISHAY/威世
|
21 |
86500
|
1206-8 |
|
||
SI5515CDC-T1-GE3
|
SK/森浦科
|
24+ |
70879
|
1206-8 |
MOS LDO AMPS
|
|
|
SI5515CDC-T1-GE3
|
VISHAY/威世
|
2022+ |
66660
|
1206-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
21+ |
60000
|
SOP-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
14+ |
45000
|
1206-8ChipFET |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
23 |
44850
|
1206-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
24+ |
33600
|
SOP-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
24+ |
32700
|
1206-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
23+ |
30300
|
SOP-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY威世通
|
21+ |
28438
|
SOT23-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
24+ |
27090
|
SOP-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
25+ |
24000
|
best-price |
NEW % ORIGI
|
|
|
VISHAY/威世
|
23+ |
23930
|
SOT23-8 |
SI5515CDC-T1-GE3
|
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
23+ |
15000
|
|
|||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
19+ |
10000
|
DIP |
香港現(xiàn)貨
|
|
|
SI5515CDC-T1-GE3
|
VISHAY/威世
|
15+ |
9406
|
1206-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
23+ |
9000
|
SOT23-8 |
*
|
|
|
SI5515CDC-T1-GE3
|
VISHAY/威世
|
23+ |
9000
|
|
|||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
23+ |
6000
|
N/A |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
23+ |
5680
|
QFN1206-8 |
|
||
SI5515CDC-T1-GE3
|
VISHAY/威世
|
22 |
5000
|
|
制造商:VishayRoHS:是配置:Single晶體管極性:NandP-Channel電阻汲極/源極RDS(導(dǎo)通):0.03Ohms,0.083Ohms柵極電荷Qg:7.5nC,7nC正向跨導(dǎo)gFS(最大值/最小值):9.5S,22.4S汲極/源極擊穿電壓:+/-20V漏極連續(xù)電流:-2.5A,-3.1A,-3.8A,+/-4A功率耗散:3.1W最大工作溫度:+150C安裝風(fēng)格:SMD/SMT封裝/箱體:1206-8ChipFET封裝:Reel最小工作溫度:-55C
型號(hào) | 廠商 | 大小 | ||
---|---|---|---|---|
SI5515CDC-T1-GE3 | Vishay Semiconductors | 0.27M | 下載 |
SI5515CDC-T1-GE3的搜索指數(shù)、商家競(jìng)價(jià)均價(jià)、商家總數(shù)以及庫(kù)存量等烽火指數(shù)情況 點(diǎn)擊查看